PBSS4032SP,115 datasheet

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• Маркировка
  PBSS4032SP,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PBSS4032SP,115 Current - Collector (ic) (max): 4.8A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 115MHz Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Power - Max: 2.3W Series: - Transistor Type: 2 PNP (Dual) Vce Saturation (max) @ Ib, Ic: 510mV @ 250mA, 5A Voltage - Collector Emitter Breakdown (max): 30V RoHS: yes Configuration: Dual Transistor Polarity: PNP Collector- Emitter Voltage VCEO Max: - 30 V Emitter- Base Voltage VEBO: - 5 V Gain Bandwidth Product fT: 115 MHz DC Collector/Base Gain hfe Min: 200 Mounting Style: SMD/SMT Continuous Collector Current: - 4.8 A Maximum Power Dissipation: 0.73 W Factory Pack Quantity: 1000 Other Names: 568-6401-2, PBSS4032SP,115
• Количество страниц
  15 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  153,84 KB

PBSS4032SP,115 datasheet скачать

PBSS4032SP,115 datasheet